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H4422S - N-Channel Enhancement-Mode MOSFET

Download the H4422S datasheet PDF. This datasheet also covers the H4422S_Hi variant, as both devices belong to the same n-channel enhancement-mode mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • RDS(on)=13.5mΩ@VGS=10V, ID=11A.
  • RDS(on)=24mΩ@VGS=4.5V, ID=5A.
  • Advanced trench process technology.
  • High Density Cell Design for Ultra Low On-Resistance 5 6 7 8 4 3 2 1 Pin 1 / 2 / 3: Source Pin 4: Gate Pin 5 / 6 / 7 / 8: Drain Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Symbol VDS VGS ID IDM PD Tj, Tstg RθJA Drain-Source Voltage Gate-Source Voltage Drain Current (Continuous) Drain Current (Pulsed).
  • 1 o Parameter Ratings 30 ±20 11 50 2.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (H4422S_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number H4422S
Manufacturer Hi-Sincerity Mocroelectronics
File Size 169.22 KB
Description N-Channel Enhancement-Mode MOSFET
Datasheet download datasheet H4422S Datasheet

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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200907 Issued Date : 2009.03.09 Revised Date : Page No. : 1/5 H4422S N-Channel Enhancement-Mode MOSFET (30V, 11A) • 8-Lead Plastic SO-8 Package Code: S H4422S Symbol & Pin Assignment Features • RDS(on)=13.5mΩ@VGS=10V, ID=11A • RDS(on)=24mΩ@VGS=4.5V, ID=5A • Advanced trench process technology • High Density Cell Design for Ultra Low On-Resistance 5 6 7 8 4 3 2 1 Pin 1 / 2 / 3: Source Pin 4: Gate Pin 5 / 6 / 7 / 8: Drain Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Symbol VDS VGS ID IDM PD Tj, Tstg RθJA Drain-Source Voltage Gate-Source Voltage Drain Current (Continuous) Drain Current (Pulsed) *1 o Parameter Ratings 30 ±20 11 50 2.
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