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HWC34NC - C-Band Power FET Non-Via Hole Chip

Description

The HWC34NC is a power GaAs FET designed for various L-band & S-band applications.

Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Channel Temperature Storage Temperature Power Dissipation mounted on an infin

Features

  • Low Cost GaAs Power FET.
  • Class A or Class AB Operation.
  • 8.5 dB Typical Gain at 4 GHz.
  • 5V to 10V Operation.

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Datasheet Details

Part number HWC34NC
Manufacturer Hexawave
File Size 74.28 KB
Description C-Band Power FET Non-Via Hole Chip
Datasheet download datasheet HWC34NC Datasheet

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Full PDF Text Transcription

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HWC34NC C-Band Power FET Non-Via Hole Chip Features • Low Cost GaAs Power FET • Class A or Class AB Operation • 8.5 dB Typical Gain at 4 GHz • 5V to 10V Operation Description The HWC34NC is a power GaAs FET designed for various L-band & S-band applications. Absolute Maximum Ratings VDS VGS ID IG TCH TSTG PT* Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Channel Temperature Storage Temperature Power Dissipation * mounted on an infinite heat sink +15V -5V IDSS 6mA 175°C -65 to +175°C 12W Autumn 2002 V1 Outline Dimensions 1525.0 1392.5 9 1235.0 1077.5 1 10 5 920.0 762.5 2 11 6 605.0 3 7 447.5 12 290.0 132.5 0.0 4 13 8 0.0 75.5 444.5 524.
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