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HWC27NC - C-Band Power FET Non-Via Hole Chip

Description

The HWC27NC is a medium power GaAs FET designed for various L-band & S-band applications.

Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Channel Temperature Storage Temperature Power Dissipation mounted on a

Features

  • Low Cost GaAs Power FET.
  • Class A or Class AB Operation.
  • 11 dB Typical Gain at 4 GHz.
  • 5V to 10V Operation.

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Datasheet Details

Part number HWC27NC
Manufacturer Hexawave
File Size 80.39 KB
Description C-Band Power FET Non-Via Hole Chip
Datasheet download datasheet HWC27NC Datasheet

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Full PDF Text Transcription

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Features • Low Cost GaAs Power FET • Class A or Class AB Operation • 11 dB Typical Gain at 4 GHz • 5V to 10V Operation Description The HWC27NC is a medium power GaAs FET designed for various L-band & S-band applications. Absolute Maximum Ratings VDS VGS ID IG TCH TSTG PT* Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Channel Temperature Storage Temperature Power Dissipation * mounted on an infinite heat sink +15V -5V IDSS 2mA 175°C -65 to +175°C 3.5W HWC27NC C-Band Power FET Non-Via Hole Chip Autumn 2002 V1 Outline Dimensions 650 Source 435 1 3 215 2 4 Source 0.0 0.0 58.5 344.
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