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HYG068N08NR1P - N-Channel Enhancement Mode MOSFET

Description

Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS.

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Datasheet Details

Part number HYG068N08NR1P
Manufacturer HUAYI
File Size 724.27 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HYG068N08NR1P Datasheet

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Full PDF Text Transcription

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HYG068N08NR1P N-Channel Enhancement Mode MOSFET Feature  80V/160A RDS(ON)= 6mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Lead- Free Devices Available (RoHS Compliant) Applications  Power management in Inverter System  Electric vehicle controllers  Lithium battery protection board  Switching Application Ordering and Marking Information Pin Description GDS TO-220FB-3L N-Channel MOSFET P G068N08N XXXYWXXXXX Package Code P: TO-220FB-3L Date Code XXXYWXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.
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