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HYG060N08NS1D - N-Channel Enhancement Mode MOSFET

Description

S GD TO-252-2L S GD TO-251-3L S D G TO-251-3S N-Channel MOSFET Ordering and Marking Information D G060N08 XYMXXXXXX U G060N08 XYMXXXXXX V G060N08 XYMXXXXXX Package Code D: TO-252-2L U: TO-251-3L V:TO-251-3S Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die at

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Datasheet Details

Part number HYG060N08NS1D
Manufacturer HUAYI
File Size 697.08 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HYG060N08NS1D Datasheet

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Full PDF Text Transcription

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HYG060N08NS1D/U/V N-Channel Enhancement Mode MOSFET Feature  80V/80A RDS(ON)=5.7 mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Lead-Free and Green DevicesAvailable (RoHS Compliant) Applications  Switching application  Power management for inverter systems Pin Description S GD TO-252-2L S GD TO-251-3L S D G TO-251-3S N-Channel MOSFET Ordering and Marking Information D G060N08 XYMXXXXXX U G060N08 XYMXXXXXX V G060N08 XYMXXXXXX Package Code D: TO-252-2L U: TO-251-3L V:TO-251-3S Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS.
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