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HYG065N15NS1W - N-Channel Enhancement Mode MOSFET

Description

Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS.

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Datasheet Details

Part number HYG065N15NS1W
Manufacturer HUAYI
File Size 1.37 MB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HYG065N15NS1W Datasheet

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Full PDF Text Transcription

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HYG065N15NS1W Feature  150V/165A RDS(ON)=6.0mΩ(typ.) @ VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Lead-Free and Green Devices Available (RoHS Compliant) Applications  Power Switching application  Uninterruptible Power Supply N-Channel Enhancement Mode MOSFET Pin Description TO-247A-3L Ordering and Marking Information W G065N15 XYMXXXXXX N-Channel MOSFET Package Code W :TO-247A-3L Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.
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