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HYG065N15NS1B - N-Channel Enhancement Mode MOSFET

Download the HYG065N15NS1B datasheet PDF. This datasheet also covers the HYG065N15NS1P variant, as both devices belong to the same n-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

TO-220FB-3L TO-263-2L Ordering and Marking Information P G065N15 XYMXXXXXX B G065N15 XYMXXXXXX N-Channel MOSFET Package Code P :TO-220FB-3L Date Code XYMXXXXXX B:TO-263-2L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish;

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Note: The manufacturer provides a single datasheet file (HYG065N15NS1P-HUAYI.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HYG065N15NS1B
Manufacturer HUAYI
File Size 1.38 MB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HYG065N15NS1B Datasheet

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Other Datasheets by HUAYI

Part Number Description
HYG065N15NS1P N-Channel Enhancement Mode MOSFET
HYG065N15NS1W N-Channel Enhancement Mode MOSFET
HYG065N07NS1B N-Channel Enhancement Mode MOSFET
HYG065N07NS1C2 N-Channel Enhancement Mode MOSFET
HYG065N07NS1MF N-Channel Enhancement Mode MOSFET

Full PDF Text Transcription

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HYG065N15NS1P/B Feature  150V/165A RDS(ON)=6.2mΩ(typ.) @ VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Lead-Free and Green Devices Available (RoHS Compliant) Applications  Power Switching application  Uninterruptible Power Supply N-Channel Enhancement Mode MOSFET Pin Description TO-220FB-3L TO-263-2L Ordering and Marking Information P G065N15 XYMXXXXXX B G065N15 XYMXXXXXX N-Channel MOSFET Package Code P :TO-220FB-3L Date Code XYMXXXXXX B:TO-263-2L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.
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