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HYG063N09NS1P - N-Channel Enhancement Mode MOSFET

Description

TO-220FB-3L Applications Switching application Power management for inverter systems Battery management N-Channel MOSFET Ordering and Marking Information P G063N09 XYMXXXXXX Package Code P :TO-220FB-3L Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding compoun

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Datasheet Details

Part number HYG063N09NS1P
Manufacturer HUAYI
File Size 391.03 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HYG063N09NS1P Datasheet

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Full PDF Text Transcription

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HYG063N09NS1P Feature  90V/120A RDS(ON)=5.5 mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Halogen-Free Devices Available (RoHS Compliant) N-Channel Enhancement Mode MOSFET Pin Description TO-220FB-3L Applications  Switching application  Power management for inverter systems  Battery management N-Channel MOSFET Ordering and Marking Information P G063N09 XYMXXXXXX Package Code P :TO-220FB-3L Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.
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