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HYG055N08NS1P - N-Channel Enhancement Mode MOSFET

Description

DS G TO-220FB- 3L G DS TO-263-2L Applications Switching application Power management for inverter systems Motor control N-Channel MOSFET Ordering and Marking Information P G055N08 XYMXXXXXX B G055N08 XYMXXXXXX Package Code P :TO-220FB-3L Date Code XYMXXXXXX B : TO-263-2L

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Datasheet Details

Part number HYG055N08NS1P
Manufacturer HUAYI
File Size 747.30 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HYG055N08NS1P Datasheet

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Full PDF Text Transcription

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HYG055N08NS1P/B Feature  80V/120A RDS(ON)=5.3 mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Lead-Free and Green DevicesAvailable (RoHS Compliant) N-Channel Enhancement Mode MOSFET Pin Description DS G TO-220FB- 3L G DS TO-263-2L Applications  Switching application  Power management for inverter systems  Motor control N-Channel MOSFET Ordering and Marking Information P G055N08 XYMXXXXXX B G055N08 XYMXXXXXX Package Code P :TO-220FB-3L Date Code XYMXXXXXX B : TO-263-2L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS.
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