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HYG055N08NS1C2 - N-Channel Enhancement Mode MOSFET

Description

DDDD DDDD SSSG Pin1 PPAK5 6-8L GS S S N-Channel MOSFET Ordering and Marking Information C2 G055N08 XYMXXXXXX Package Code C2 : PPAK5 6-8L Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;whi

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Datasheet Details

Part number HYG055N08NS1C2
Manufacturer HUAYI
File Size 629.78 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HYG055N08NS1C2 Datasheet

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Full PDF Text Transcription

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HYG055N08NS1C2 N-Channel Enhancement Mode MOSFET Feature  80V/85A RDS(ON)=4.8 mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Halogen-Free Devices Available (RoHS Compliant) Applications  Switching application  Power management for inverter systems  Motor control Pin Description DDDD DDDD SSSG Pin1 PPAK5*6-8L GS S S N-Channel MOSFET Ordering and Marking Information C2 G055N08 XYMXXXXXX Package Code C2 : PPAK5*6-8L Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.
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