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HYG018N10NS1P - N-Channel Enhancement Mode MOSFET

Description

TO-220FB-3L TO-263-2L Applications Energy Storage Battery Protection Motor control Single N-Channel MOSFET Ordering and Marking Information P G018N10 XYMXXXXXX B G018N10 XYMXXXXXX Package Code P :TO-220FB-3L Date Code XYMXXXXXX B : TO-263-2L Note: HUAYI lead-free products

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Datasheet Details

Part number HYG018N10NS1P
Manufacturer HUAYI
File Size 647.09 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HYG018N10NS1P Datasheet

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Full PDF Text Transcription

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HYG018N10NS1P/B N-Channel Enhancement Mode MOSFET Feature  100V/280A RDS(ON)=1.8mΩ(typ.)@VGS=10V  100% Avalanche Tested  Reliable and Rugged  Halogen-Free and Green Devices Available (RoHS Compliant) Pin Description TO-220FB-3L TO-263-2L Applications  Energy Storage  Battery Protection  Motor control Single N-Channel MOSFET Ordering and Marking Information P G018N10 XYMXXXXXX B G018N10 XYMXXXXXX Package Code P :TO-220FB-3L Date Code XYMXXXXXX B : TO-263-2L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.
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