• Part: HYG018N10NS1B
  • Description: N-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: HUAYI
  • Size: 647.09 KB
Download HYG018N10NS1B Datasheet PDF
HUAYI
HYG018N10NS1B
Feature - 100V/280A RDS(ON)=1.8mΩ(typ.)@VGS=10V - 100% Avalanche Tested - Reliable and Rugged - Halogen-Free and Green Devices Available (Ro HS pliant) Pin Description TO-220FB-3L TO-263-2L Applications - Energy Storage - Battery Protection - Motor control Single N-Channel MOSFET Ordering and Marking Information G018N10 XYMXXXXXX G018N10 XYMXXXXXX Package Code P :TO-220FB-3L Date Code XYMXXXXXX B : TO-263-2L Note: HUAYI lead-free products contain molding pounds/die attach materials and 100% matte tin plate Termi Nation finish; which are fully pliant with Ro HS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green” to mean lead-free (Ro HS pliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HUAYI reserves the right to make changes, corrections, enhancements,...