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HYG014N03LR1P - N-Channel Enhancement Mode MOSFET

Description

TO-220FB-3L TO-263-2L Applications Battery Protection Power management for inverter systems Ordering and Marking Information N-Channel MOSFET P P G014N03 XYMXXXXXX B G014N03 XYMXXXXXX Package Code P:TO-220FB-3L Date Code XYMXXXXXX B : TO-263-2L Note: HUAYI lead-free products

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Datasheet Details

Part number HYG014N03LR1P
Manufacturer HUAYI
File Size 901.72 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HYG014N03LR1P Datasheet

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Full PDF Text Transcription

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HYG014N03LR1P/B Feature  30V/275A RDS(ON)=1.3mΩ(typ.)@VGS = 10V RDS(ON)=1.6mΩ(typ.)@VGS = 4.5V  100% Avalanche Tested  Reliable and Rugged  Lead-Free and Green DevicesAvailable (RoHS Compliant) N-Channel Enhancement Mode MOSFET Pin Description TO-220FB-3L TO-263-2L Applications  Battery Protection  Power management for inverter systems Ordering and Marking Information N-Channel MOSFET P P G014N03 XYMXXXXXX B G014N03 XYMXXXXXX Package Code P:TO-220FB-3L Date Code XYMXXXXXX B : TO-263-2L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS.
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