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HYG014N03LR1B - N-Channel Enhancement Mode MOSFET

Download the HYG014N03LR1B datasheet PDF. This datasheet also covers the HYG014N03LR1P variant, as both devices belong to the same n-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

TO-220FB-3L TO-263-2L Applications Battery Protection Power management for inverter systems Ordering and Marking Information N-Channel MOSFET P P G014N03 XYMXXXXXX B G014N03 XYMXXXXXX Package Code P:TO-220FB-3L Date Code XYMXXXXXX B : TO-263-2L Note: HUAYI lead-free products

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Note: The manufacturer provides a single datasheet file (HYG014N03LR1P-HUAYI.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HYG014N03LR1B
Manufacturer HUAYI
File Size 901.72 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HYG014N03LR1B Datasheet

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Other Datasheets by HUAYI

Part Number Description
HYG014N03LR1P N-Channel Enhancement Mode MOSFET
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Full PDF Text Transcription

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HYG014N03LR1P/B Feature  30V/275A RDS(ON)=1.3mΩ(typ.)@VGS = 10V RDS(ON)=1.6mΩ(typ.)@VGS = 4.5V  100% Avalanche Tested  Reliable and Rugged  Lead-Free and Green DevicesAvailable (RoHS Compliant) N-Channel Enhancement Mode MOSFET Pin Description TO-220FB-3L TO-263-2L Applications  Battery Protection  Power management for inverter systems Ordering and Marking Information N-Channel MOSFET P P G014N03 XYMXXXXXX B G014N03 XYMXXXXXX Package Code P:TO-220FB-3L Date Code XYMXXXXXX B : TO-263-2L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS.
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