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HYG200P10LR1P - P-Channel Enhancement Mode MOSFET

Description

TO-220FB-3L TO-263-2L Applications Portable equipment and battery powered systems DC-DC Converters Ordering and Marking Information P G200P10 XYMXXXXXX B G200P10 XYMXXXXXX P-Channel MOSFET Package Code P: TO-220FB-3L Date Code XYMXXXXXX B: TO-263-2L Note: HUAYI lead-free products

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Datasheet Details

Part number HYG200P10LR1P
Manufacturer HOOYI
File Size 1.32 MB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet HYG200P10LR1P Datasheet

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Full PDF Text Transcription

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HYG200P10LR1P/B Feature  -100V/-80A RDS(ON)= 20 mΩ(typ.) @ VGS = -10V RDS(ON)= 24 mΩ(typ.) @ VGS = -4.5V  100% Avalanche Tested  Reliable and Rugged  Lead Free and Green Devices Available (RoHS Compliant) P-Channel Enhancement Mode MOSFET Pin Description TO-220FB-3L TO-263-2L Applications  Portable equipment and battery powered systems  DC-DC Converters Ordering and Marking Information P G200P10 XYMXXXXXX B G200P10 XYMXXXXXX P-Channel MOSFET Package Code P: TO-220FB-3L Date Code XYMXXXXXX B: TO-263-2L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS.
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