• Part: HYG200P10LR1B
  • Description: P-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: HOOYI
  • Size: 1.32 MB
Download HYG200P10LR1B Datasheet PDF
HOOYI
HYG200P10LR1B
Feature - -100V/-80A RDS(ON)= 20 mΩ(typ.) @ VGS = -10V RDS(ON)= 24 mΩ(typ.) @ VGS = -4.5V - 100% Avalanche Tested - Reliable and Rugged - Lead Free and Green Devices Available (Ro HS pliant) P-Channel Enhancement Mode MOSFET Pin Description TO-220FB-3L TO-263-2L Applications - Portable equipment and battery powered systems - DC-DC Converters Ordering and Marking Information P G200P10 XYMXXXXXX B G200P10 XYMXXXXXX P-Channel MOSFET Package Code P: TO-220FB-3L Date Code XYMXXXXXX B: TO-263-2L Note: HUAYI lead-free products contain molding pounds/die attach materials and 100% matte tin plate Termi Nation finish; which are fully pliant with Ro HS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green” to mean lead-free (Ro HS pliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by...