Datasheet4U Logo Datasheet4U.com

HY3215PS - N-Channel Enhancement Mode MOSFET

Download the HY3215PS datasheet PDF. This datasheet also covers the HY3215 variant, as both devices belong to the same n-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HY3215-HOOYI.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HY3215PS
Manufacturer HOOYI
File Size 759.00 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HY3215PS Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HY3210B N-Channel 100V MOSFET VBsemi
HY3210NA2B N-Channel Enhancement Mode MOSFET HUAYI
HY3210NA2P N-Channel Enhancement Mode MOSFET HUAYI
HY3003D N-Channel Enhancement Mode MOSFET HUAYI
HY3003U N-Channel Enhancement Mode MOSFET HUAYI

Other Datasheets by HOOYI

Part Number Description
HY3215P N-Channel Enhancement Mode MOSFET
HY3215PM N-Channel Enhancement Mode MOSFET
HY3215 N-Channel Enhancement Mode MOSFET
HY3215B N-Channel Enhancement Mode MOSFET
HY3215M N-Channel Enhancement Mode MOSFET

Full PDF Text Transcription

Click to expand full text
HY3215P/M/B/PS/PM Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink TC=25°C 150 ±25 175 -55 to 175 120 IDM Pulsed Drain Current * ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Avalanche Ratings TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 480** 120 84 300 150 0.5 62.5 EAS Avalanche Energy, Single Pulsed L=0.
Published: |