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HY3210B-VB
HY3210B-VB Datasheet
N-Channel 100-V (D-S) MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.010 at VGS = 10 V 100
0.023 at VGS = 4.5 V
ID (A) 100 85
FEATURES • TrenchFET® Power MOSFET • 175 °C Maximum Junction Temperature • Compliant to RoHS Directive 2002/95/EC
TO-263
G DS Top View
D
G S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage Gate-Source Voltage
VDS
100
V
VGS
± 20
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C TC = 125 °C
100
ID
75 a
A
Pulsed Drain Current
IDM
300
Avalanche Current Single Pulse Avalanche Energyb
IAS
75
L = 0.1 mH
EAS
280
mJ
Maximum Power Dissipationb
TC = 25 °C (TO-220AB and TO-263) TA = 25 °C (TO-263)d
PD
250c 3.
HY3210B Datasheet
