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HY3210PM - N-Channel Enhancement Mode MOSFET

Download the HY3210PM datasheet PDF (HY3210P included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for n-channel enhancement mode mosfet.

Description

DS G TO-220FB-3L DS G TO-220FB-3M DS G TO-263-2L Applications Switching application

Power Management for Inverter Systems.

Features

  • 100V/120A RDS(ON) = 6.8 mΩ (typ. ) @ VGS=10V.
  • 100% avalanche tested.
  • Reliable and Rugged.
  • Lead Free and Green Devices Available (RoHS Compliant) N-Channel Enhancement Mode MOSFET Pin.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HY3210P-HOOYI.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HY3210PM
Manufacturer HOOYI
File Size 4.61 MB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HY3210PM Datasheet

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Other Datasheets by HOOYI
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Full PDF Text Transcription

Click to expand full text
HY3210P/M/B/PS/PM Features • 100V/120A RDS(ON) = 6.8 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) N-Channel Enhancement Mode MOSFET Pin Description DS G TO-220FB-3L DS G TO-220FB-3M DS G TO-263-2L Applications • Switching application • Power Management for Inverter Systems.
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