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HY3208A - N-Channel Enhancement Mode MOSFET

Download the HY3208A datasheet PDF. This datasheet also covers the HY3208AP variant, as both devices belong to the same n-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (HY3208AP-HOOYI.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HY3208A
Manufacturer HOOYI
File Size 906.72 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HY3208A Datasheet

📁 Similar Datasheet

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Other Datasheets by HOOYI

Part Number Description
HY3208B N-Channel MOSFET
HY3208M N-Channel MOSFET
HY3208P N-Channel MOSFET
HY3208PM N-Channel MOSFET
HY3208PS N-Channel MOSFET

Full PDF Text Transcription

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HY3208AP/M/B/PS/PM Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink TC=25°C 80 ±25 175 55 to- 175 120 IDM Pulsed Drain Current * ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Avalanche Ratings TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 480** 120 85 227 113 0.66 62.5 EAS Avalanche Energy, Single Pulsed L=0.
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