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HY1607P - N-Channel MOSFET

Description

68V/70A RDS(ON) = 6.5 mΩ (typ.) @ VGS=10V 100% avalanche tested Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) G D S D Applications Switching application

Power Management for Inverter Systems.

Features

  • Pin.

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Datasheet Details

Part number HY1607P
Manufacturer HOOYI
File Size 943.17 KB
Description N-Channel MOSFET
Datasheet download datasheet HY1607P Datasheet

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Full PDF Text Transcription

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HY1607P N-Channel Enhancement Mode MOSFET Features Pin Description • 68V/70A RDS(ON) = 6.5 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) G D S D Applications • Switching application • Power Management for Inverter Systems. G S N-Channel MOSFET Ordering and Marking Information P HY1607 YYÿ WWJ G Package Code P : TO220-3L Date Code YYWW Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. HOOYI lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature.
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