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HY1606U - N-Channel Enhancement Mode MOSFET

Download the HY1606U datasheet PDF. This datasheet also covers the HY1606D variant, as both devices belong to the same n-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

GDS TO-252-2L GDS TO-251-3L GDS TO-251-3L Applications

Power Management for Inverter Systems.

Features

  • 60V/66A, RDS(ON)=10.4 m(typ. ) @ VGS=10V.
  • Avalanche Rated.
  • Reliable and Rugged.
  • Lead Free and Green Devices Available (RoHS Compliant) N-Channel Enhancement Mode MOSFET Pin.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HY1606D-HUAYI.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HY1606U
Manufacturer HUAYI
File Size 842.85 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HY1606U Datasheet

Full PDF Text Transcription

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HY1606D/U/V Features • 60V/66A, RDS(ON)=10.4 m(typ.) @ VGS=10V • Avalanche Rated • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) N-Channel Enhancement Mode MOSFET Pin Description GDS TO-252-2L GDS TO-251-3L GDS TO-251-3L Applications  Power Management for Inverter Systems. Ordering and Marking Information N-Channel MOSFET D U V HY1606 HY1606 HY1606 YYXXXJWW G YYXXXJWW G YYXXXJWW G Package Code D : TO-252-2L V : TO-251-3S Date Code YYXXX WW U : TO-251-3L Assembly Material G : Lead Free Device Note: HUAYI lead -free products contain molding compounds/die attach materials and 100% matte tin plate Termination finish;which are fully compliant with RoHS.
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