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HNM2302ALB - N-Channel Enhancement Mode Field Effect Transistor SMD

Features

  • 　.
  • 20V, 3.7A, RDS(ON)=50mΩ @ VGS=4.5V 　.
  • High dense cell design for extremely low RDS(ON) 　.
  • Rugged and reliable 　.
  • Lead free product is acquired 　.
  • SOT-23 Package 　.
  • Marking Code: A2SHB 　　Case Material: Molded Plastic. 　　UL Flammability Classification Rating 94V-0 Internal Block Diagram D HNM2302ALB（SOT-23） D HNM2302ALB N-Channel MOSFETs HNM2302ALB N-Channel Enhancement Mode Field Effect Transistor 2302 SI2302 AO2302 GMS2302 （） G S SOT-23 S G SOT-23 DEVICE.

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Datasheet Details

Part number HNM2302ALB
Manufacturer HAOHAI
File Size 272.26 KB
Description N-Channel Enhancement Mode Field Effect Transistor SMD
Datasheet download datasheet HNM2302ALB Datasheet

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Full PDF Text Transcription

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3.7A, 20V N 　N 　N-Channel Enhancement Mode Field Effect Transistor SMD 　　Features 　■20V, 3.7A, RDS(ON)=50mΩ @ VGS=4.5V 　■High dense cell design for extremely low RDS(ON) 　■Rugged and reliable 　■Lead free product is acquired 　■SOT-23 Package 　■Marking Code: A2SHB 　　Case Material: Molded Plastic.
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