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HNM2302 - N-Channel Enhancement Mode Field Effect Transistor

Features

  • 　.
  • 20V, 3.5A, RDS(ON)=60mΩ @VGS=4.5V 　.
  • High dense cell design for extremely low RDS(ON) 　.
  • Rugged and reliable 　.
  • Lead free product is acquired 　.
  • SOT-23 Package 　.
  • Marking Code: A2 　　Case Material: Molded Plastic. 　　UL Flammability Classification Rating 94V-0 Internal Block Diagram D HNM2302（SOT-23） D HNM2302 N-Channel MOSFETs HNM2302 N-Channel Enhancement Mode Field Effect Transistor 2302 SI2302 AO2302 GM2302 （） G S S SOT-23 G SOT-23 　.

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Datasheet Details

Part number HNM2302
Manufacturer HAOHAI
File Size 270.60 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet HNM2302 Datasheet

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Full PDF Text Transcription

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3.5A, 20V N 　N MOS 　N-Channel Enhancement Mode Field Effect Transistor 　　Features 　■20V, 3.5A, RDS(ON)=60mΩ @VGS=4.5V 　■High dense cell design for extremely low RDS(ON) 　■Rugged and reliable 　■Lead free product is acquired 　■SOT-23 Package 　■Marking Code: A2 　　Case Material: Molded Plastic.
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