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HM8N65F - 650V N-Channel MOSFET

Download the HM8N65F datasheet PDF. This datasheet also covers the HM8N65 variant, as both devices belong to the same 650v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.

This advanced technology has been espe cially tailored to minimize o n-state r esistance, pr ovide superior switching performance, and withstand high ener gy pulse in the avalanche and commutation mode.

Features

  • 7.5A, 650V, RDS(on) = 1.20Ω (typical) @VGS = 10 V.
  • Low gate charge ( typical 29nC).
  • High ruggedness.
  • Fast wsitching.
  • 100% avalanche tested.
  • Improved dv/dt capability {D GDS TO-220 GD S TO-220F.
  • ◀▲ {G.
  • {S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HM8N65-HMSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by H&M Semiconductor

Part Number Description
HM8N65 650V N-Channel MOSFET
HM8N65I 650V N-Channel MOSFET
HM8N65K 650V N-Channel MOSFET
HM8N60 600V N-Channel MOSFET
HM8N60F 600V N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HM8N65 / HM8N65F HM8N65 / HM8N65F 650V N-Channel MOSFET General Description This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology. This advanced technology has been espe cially tailored to minimize o n-state r esistance, pr ovide superior switching performance, and withstand high ener gy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency sw itched mode power supp lies, active power factor corr ection based on half br idge topology. Features • 7.5A, 650V, RDS(on) = 1.
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