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HM8N65 - 650V N-Channel MOSFET

Description

This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.

This advanced technology has been espe cially tailored to minimize o n-state r esistance, pr ovide superior switching performance, and withstand high ener gy pulse in the avalanche and commutation mode.

Features

  • 7.5A, 650V, RDS(on) = 1.20Ω (typical) @VGS = 10 V.
  • Low gate charge ( typical 29nC).
  • High ruggedness.
  • Fast wsitching.
  • 100% avalanche tested.
  • Improved dv/dt capability {D GDS TO-220 GD S TO-220F.
  • ◀▲ {G.
  • {S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1).

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Other Datasheets by H&M Semiconductor

Part Number Description
HM8N65F 650V N-Channel MOSFET
HM8N65I 650V N-Channel MOSFET
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HM8N60 600V N-Channel MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HM8N65 / HM8N65F HM8N65 / HM8N65F 650V N-Channel MOSFET General Description This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology. This advanced technology has been espe cially tailored to minimize o n-state r esistance, pr ovide superior switching performance, and withstand high ener gy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency sw itched mode power supp lies, active power factor corr ection based on half br idge topology. Features • 7.5A, 650V, RDS(on) = 1.
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