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HM6N15D - MOSFET

Description

The HM6N15D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

can be used in a wide variety of applications.

Features

  • VDS = 150V,ID =6A RDS(ON).

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Datasheet Details

Part number HM6N15D
Manufacturer H&M Semiconductor
File Size 741.09 KB
Description MOSFET
Datasheet download datasheet HM6N15D Datasheet

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Full PDF Text Transcription

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HM6N15D Description The HM6N15D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
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