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HM6N10PR - N-Channel Enhancement Mode Power MOSFET

Description

The HM6N10PR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS = 100V,ID = 6A RDS(ON) < 140mΩ @ VGS=10V (Typ:110mΩ).
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Excellent package for good heat dissipation.

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Datasheet Details

Part number HM6N10PR
Manufacturer H&M Semiconductor
File Size 603.00 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet HM6N10PR Datasheet

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N-Channel Enhancement Mode Power MOSFET Description The HM6N10PR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
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