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HM5P55R - P-Channel Enhancement Mode Power MOSFET

Description

The HM5P55R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS =-55V,ID =-5A RDS(ON).

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Datasheet Details

Part number HM5P55R
Manufacturer H&M Semiconductor
File Size 610.11 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet HM5P55R Datasheet

Full PDF Text Transcription

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P-Channel Enhancement Mode Power MOSFET Description The HM5P55R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
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