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HM5P02MR - P-Channel Enhancement Mode Power MOSFET

Description

The HM5P02MR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

Features

  • VDS = -20V,ID = -5.0A RDS(ON).

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HM5P02MR P-Channel Enhancement Mode Power MOSFET Description The HM5P02MR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -20V,ID = -5.0A RDS(ON) <35mΩ @ VGS=-2.5V RDS(ON) < 25mΩ @ VGS=-4.
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