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HM4P15Q - P-Channel Enhancement Mode Power MOSFET

Description

The HM4P15Q uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

Features

  • VD S = -150V,I = -4A RDS(ON) < 980mΩ @ VGS=-6V RDS(ON) < 780mΩ @ VGS=-10V.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

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HM4P15Q P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4P15Q uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.
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