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HM4P10R - -100V P-Channel Enhancement Mode MOSFET

Description

The HM4P10R uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Features

  • VDS = -100V ID =-4.0 A RDS(ON) < 210mΩ @ VGS=10V.

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HM4P10R -100V P-Channel Enhancement Mode MOSFET Description The HM4P10R uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -100V ID =-4.
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