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HM4438 - N-Channel Enhancement Mode Power MOSFET

General Description

The +0 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS = 60V,ID =9A RDS(ON) < 16mΩ @ VGS=10V (Typ:12mΩ).
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Low gate to drain charge to reduce switching losses Schematic diagram.

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Other Datasheets by H&M Semiconductor

Part Number Description
HM4430 N-Channel Enhancement Mode Power MOSFET
HM4430A N-Channel Enhancement Mode Power MOSFET
HM4435 P-Channel Enhancement Mode Power MOSFET
HM4435B P-Channel Enhancement Mode Power MOSFET
HM4437 P-Channel Enhancement Mode Power MOSFET
HM4402A N-Channel Enhancement Mode Power MOSFET
HM4402B N-Channel Enhancement Mode Power MOSFET
HM4402C N-Channel Enhancement Mode Power MOSFET
HM4402D N-Channel Enhancement Mode Power MOSFET
HM4402E N-Channel Enhancement Mode Power MOSFET

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+0 N-Channel Enhancement Mode Power MOSFET Description The +0 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.