HM4402E - N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

General Description

The HM4402E uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

VDS =20V,ID =14A RDS(ON).

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HM4402E n-channel enhancement mode power mosfet by H&M Semiconductor - Datasheet Preview

Datasheet Details

Part number	HM4402E
Manufacturer	H&M Semiconductor
File Size	381.50 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	HM4402E Datasheet

Other Datasheets by H&M Semiconductor

Part Number	Description
HM4402A	N-Channel Enhancement Mode Power MOSFET
HM4402B	N-Channel Enhancement Mode Power MOSFET
HM4402C	N-Channel Enhancement Mode Power MOSFET
HM4402D	N-Channel Enhancement Mode Power MOSFET
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HM4406A	N-Channel Enhancement Mode Power MOSFET
HM4407	P-Channel Enhancement Mode Power MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Description The HM4402E uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =20V,ID =14A RDS(ON) <7 mΩ @ VGS=4.5V RDS(ON) <9 mΩ @ VGS=2.