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HM40SDN02Q - Dual Asymmetric N-Channel Enhancement Mode MOSFET

Description

This device uses advanced trench technology to provide excellent RDSON and low gate charge.

This device is suitable for use as a load switch or in PWM applications.

Applications Power Management in notebook computer Portable Equipment Battery Powered Systems Ordering

Features

  • s.
  • Pin configuration VDS VGS RDSON Typ. ID Top view 5.2mR@10V 20V ±20V 40A 6.8mR@4V5.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HM40SDN02Q HM40SDN02Q Dual Asymmetric N-Channel Enhancement Mode MOSFET  Features  Pin configuration VDS VGS RDSON Typ. ID Top view 5.2mR@10V 20V ±20V 40A 6.8mR@4V5  Description This device uses advanced trench technology to provide excellent RDSON and low gate charge. This device is suitable for use as a load switch or in PWM applications.
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