• Part: HM4030
  • Description: N-Channel Trench Power MOSFET
  • Category: MOSFET
  • Manufacturer: H&M Semiconductor
  • Size: 471.96 KB
Download HM4030 Datasheet PDF
H&M Semiconductor
HM4030
Description The+0 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. Features - VDS=100V; ID=190A@ VGS=10V; RDS(ON)<7.1mΩ @ VGS=10V - Special Designed for E-Bike Controller Application - Ultra Low On-Resistance - High UIS and UIS 100% Test Application - 72V E-Bike controller applications - Hard Switched and High Frequency Circuits - Uninterruptible Power Supply To-220 Top View Schematic Diagram VDSS = 100V IDSS = 190A RDS(ON)= 6.8mΩ Package Marking and Ordering Information Device Marking Device Device Package +0 +0 TO-220 Reel Size - Table 1. Absolute Maximum Ratings (TA=25℃) Symbol Parameter Drain-Source Voltage (VGS=0V) Gate-Source Voltage (VDS=0V) ID (DC) Drain Current (DC) at Tc=25℃ ID (DC) IDM (pluse) Drain Current (DC) at Tc=100℃ Drain Current-Continuous@ Current-Pulsed...