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HM2341B - P-Channel Enhancement Mode Power MOSFET

Description

The HM2341B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

Features

  • VDS = -30V,ID = -4.2A RDS(ON) < 130mΩ @ VGS=-2.5V RDS(ON) < 75mΩ @ VGS=-4.5V RDS(ON) < 65mΩ @ VGS=-10V.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package D G S Schematic diagram  Marking and pin Assignment.

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Datasheet Details

Part number HM2341B
Manufacturer H&M Semiconductor
File Size 436.07 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet HM2341B Datasheet

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Full PDF Text Transcription

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HM2341B P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM2341B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = -30V,ID = -4.2A RDS(ON) < 130mΩ @ VGS=-2.5V RDS(ON) < 75mΩ @ VGS=-4.
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