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HM2341 - P-Channel Enhancement Mode Power MOSFET

Description

The HM2341 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

Features

  • VDS = -30V,ID = -4.2A RDS(ON) < 130mΩ @ VGS=-2.5V RDS(ON) < 75mΩ @ VGS=-4.5V RDS(ON) < 65mΩ @ VGS=-10V.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package D G S Schematic diagram 2341 Marking and pin Assignment.

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Datasheet Details

Part number HM2341
Manufacturer H&M Semiconductor
File Size 494.54 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet HM2341 Datasheet

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Full PDF Text Transcription

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HM2341 P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM2341 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = -30V,ID = -4.2A RDS(ON) < 130mΩ @ VGS=-2.5V RDS(ON) < 75mΩ @ VGS=-4.
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