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HM2318B
N Channel Enhancement Mode MOSFET
DESCRIPTION HM2318B is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION SOT-23
3
D
G
S
1
2
1.Gate 2.Source 3.Drain
PART MARKING SOT-23
3
18YW
1
2
Y: Year Code W: Week Code
FEATURE
40V/3.9A, RDS(ON) = 42mΩ (Typ.) @VGS = 10V
40V/3.5A, RDS(ON) = 53mΩ @VGS = 4.5V
40V/2.0A, RDS(ON) = 75 mΩ @VGS = 2.
HM2318B Datasheet
