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HM2318APR - N-Channel Enhancement Mode Power MOSFET

Description

The HM$35 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • RDS(ON) ≦28mΩ@VGS=10V.
  • RDS(ON) ≦38mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.
  • Capable doing Cu wire bonding.

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Datasheet Details

Part number HM2318APR
Manufacturer H&M Semiconductor
File Size 1.10 MB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet HM2318APR Datasheet

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Other Datasheets by H&M Semiconductor

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HM2318A N-Channel Enhancement Mode Power MOSFET
HM2318 N-Channel Enhancement Mode Power MOSFET
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Full PDF Text Transcription

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HM2318$35 N-Channel 40V(D-S) MOSFET GENERAL DESCRIPTION The HM$35 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.    FEATURES ● RDS(ON) ≦28mΩ@VGS=10V ● RDS(ON) ≦38mΩ@VGS=4.
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