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HM1P20 - P-Channel Enhancement Mode Power MOSFET

Description

The HM1P20 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS =-200V,ID =-1A RDS(ON).

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Datasheet Details

Part number HM1P20
Manufacturer H&M Semiconductor
File Size 601.88 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet HM1P20 Datasheet

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Full PDF Text Transcription

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P-Channel Enhancement Mode Power MOSFET Description The HM1P20 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-200V,ID =-1A RDS(ON) <1500mΩ @ VGS=-10V （Typ.
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