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HM1P10MR - -100V P-Channel Enhancement Mode MOSFET

Description

The HM1P10MR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Features

  • VDS = -100V ID =-0.9 A RDS(ON) < 0.65Ω @ VGS=10V.

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Datasheet Details

Part number HM1P10MR
Manufacturer H&M Semiconductor
File Size 1.00 MB
Description -100V P-Channel Enhancement Mode MOSFET
Datasheet download datasheet HM1P10MR Datasheet

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Full PDF Text Transcription

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HM1P10MR -100V P-Channel Enhancement Mode MOSFET Description The HM1P10MR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -100V ID =-0.9 A RDS(ON) < 0.
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