Datasheet4U Logo Datasheet4U.com

HM12N60F - 600V N-Channel MOSFET

Download the HM12N60F datasheet PDF. This datasheet also covers the HM12N60 variant, as both devices belong to the same 600v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 12.0A, 600V, RDS(on) = 0.65Ω @VGS = 10 V.
  • Low gate charge ( typical 52nC).
  • High ruggedness.
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability {D GDS TO-220 GD S TO-220F.
  • ◀▲ {G.
  • {S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Sou.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HM12N60-HMSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HM12N60F
Manufacturer H&M Semiconductor
File Size 316.76 KB
Description 600V N-Channel MOSFET
Datasheet download datasheet HM12N60F Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HM12N60 N-Channel 650V Power MOSFET VBsemi
HM12 Output Toroidal Inductors Bi technologies
HM1-6504883 4096 x 1 CMOS RAM Intersil Corporation
HM1-6504B883 4096 x 1 CMOS RAM Intersil Corporation
HM1-6508883 1024 x 1 CMOS RAM Intersil Corporation

Other Datasheets by H&M Semiconductor

Part Number Description
HM12N60 600V N-Channel MOSFET
HM12N65 650V N-Channel MOSFET
HM12N65F 650V N-Channel MOSFET
HM12N02D N-Channel Enhancement Mode Power MOSFET
HM12N20D N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription

Click to expand full text
HM12N60 / HM12N60F 600V N-Channel MOSFET General Description This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features • 12.0A, 600V, RDS(on) = 0.
Published: |