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HM12N20D - N-Channel Enhancement Mode Power MOSFET

Description

The HM1' uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS =200V,ID =A RDS(ON) < 80mΩ @ VGS=10V (Typ:63mΩ).
  • High density cell design for ultra low Rdson.
  • Fully characterized Avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation.
  • Special process technology for high ESD capability.

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Datasheet Details

Part number HM12N20D
Manufacturer H&M Semiconductor
File Size 380.47 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet HM12N20D Datasheet

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Full PDF Text Transcription

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HM1' N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM1' uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
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