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HM120N04K - N-Channel Enhancement Mode Power MOSFET

Description

The HM120N04K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS =40V,ID =120A RDS(ON) =4.2mΩ (Typ)@ VGS=10V RDS(ON) =6.5mΩ (Typ)@ VGS=4.5V.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation.
  • Special process technology for high ESD capability Schematic diagram.

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HM120N04K N-Channel Enhancement Mode Power MOSFET Description The HM120N04K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =40V,ID =120A RDS(ON) =4.2mΩ (Typ)@ VGS=10V RDS(ON) =6.5mΩ (Typ)@ VGS=4.
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