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HM120N03K - N-Channel Enhancement Mode Power MOSFET

Description

The +01.

uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS =30V,ID =120A RDS(ON).

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Full PDF Text Transcription

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+01. N-Channel Enhancement Mode Power MOSFET Description The +01. uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =120A RDS(ON) <3.5mΩ @ VGS=10V (Typ:3.0mΩ) Schematic diagram ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability +01.
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