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DFNWB2X2-6L-J Plastic-Encapsulate MOSFETS
HM08P12D P-Channel MOSFET
V(BR)DSS
RDS(on)MAX
ID
28mΩ@-4.5V
32mΩ@-3.7V
-12V
40mΩ@-2.5V
-8A
63mΩ@-1.8V
150mΩ@-1.5V
DFNWB2×2-6L-J
FEATURE Advanced trench MOSFET process technology Ultra low on-resistance with low gate charge
APPLICATION PWM application Load switch Battery charge in cellular handset
MARKING:
Equivalent Circuit
ABSOLUTE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature
Symbol VDS VGS ID
IDM*
RθJA Tj TSTG
*Repetitive rating：Pluse width limited by junction temperature.
HM08P12D Datasheet
