HM08DN10D
Description
The HM08DN10D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
- VDS =0V,ID =A RDS(ON) <mΩ @ VGS=10V RDS(ON) <mΩ @ VGS=4.5V
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Special process technology for high ESD capability
Application
- Power switching application
- Hard switched and high frequency circuits
- Uninterruptible power supply
Schematic diagram
Top View
100% UIS TESTED! 100% ∆Vds TESTED!
Package Marking and Ordering Information
Device Marking HM08DN10D
Device HM08DN10D
Device Package DFN5X6-8L
Reel Size
- Tape width
- Quantity
- Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Drain-Source Voltage
Parameter
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Continuo...
