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HM08DN10D - N-Channel Enhancement Mode Power MOSFET

Description

The HM08DN10D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS =0V,ID =A RDS(ON).

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Datasheet Details

Part number HM08DN10D
Manufacturer H&M Semiconductor
File Size 557.51 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet HM08DN10D Datasheet

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Full PDF Text Transcription

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N-Channel Enhancement Mode Power MOSFET Description The HM08DN10D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =0V,ID =A RDS(ON) <mΩ @ VGS=10V RDS(ON) <mΩ @ VGS=4.
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