• Part: BSS138KR
  • Description: N-Channel 50-V MOSFET
  • Category: MOSFET
  • Manufacturer: H&M Semiconductor
  • Size: 534.38 KB
Download BSS138KR Datasheet PDF
H&M Semiconductor
BSS138KR
FEATURE Low On-Resistance Low Gate Threshold Voltage Fast Switching Speed Low Input / Output Leakage 3D G1 2S Marking and pin Assignment SOT-323 top view Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Continuous Gate-Source Voltage Continuous Drain Current Power Dissipation Thermal Resistance from Junction to Ambient Operating Temperature Storage Temperature Symbol V DS VGSS ID PD RθJA Tj T stg Value 50 ±12 0.34 0.35 357 150 -55 ~+150 Unit A W ℃/W ℃ Electrical characteristics (Ta=25℃ unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit Off characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250µA VDS =0V, VGS =±12V ±1 µA Gate-body leakage IGSS VDS =0V, VGS =±10V ±0.5 µA VDS =0V, VGS =±5V ±0.05 µA Zero gate voltage drain current IDSS VDS =50V, VGS =0V µA On characteristics Gate-threshold voltage Static drain-source on-resistance VGS(th)...