Datasheet Details
| Part number | GC3M0160120D |
|---|---|
| Manufacturer | Gwok |
| File Size | 3.67 MB |
| Description | Silicon Carbide Power MOSFET |
| Datasheet |
 GC3M0160120D Datasheet
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Key Features
- High blocking voltage with low On- resistan ce VD S 1200 V.
- High speed switching with low capacitances.
- Fast intrinsic diode with low reverse recovery (Qrr) ID @ 25˚C 17 A.
- Halogen free, RoHS compliant RDS(on) 160 mΩ Benefits.
- Higher system efficiency.
- Reduced cooling requirements.
- Increased power density.
- Increased system switching frequency.